Absence of long-range ordered reconstruction on the GaAs(311)A surface

Article

关键词: SCANNING-TUNNELING-MICROSCOPY;    GAAS;    GAAS(100);    GROWTH;   

DOI  :  10.1103/PhysRevB.55.15397

来源: SCIE

【 摘 要 】

We have investigated the decapped GaAs(311)A surface using both scanning tunneling microscopy and synchrotron-radiation photoemission. While our data are in broad agreement with the structural model of GaAs(311)A proposed in a recent study [Wassermeier et al., Phys. Rev. B 51, 14721 (1995)], we find considerable differences in the surface order. In particular, the As dimer rows are unbroken overmuch shorter length scales and are highly kinked. We observe a correspondingly lower degree of anisotropy in the surface roughness than that previously reported. An (8 x 1) reconstruction was not observed. An analysis. of As 3d and Ga 3d core-level photoemission spectra suggests that surface As atoms are in only one bonding configuration while surface Ga adopts two different bonding states. We discuss possible origins for the core-level spectra surface components.

【 授权许可】

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