Large two-level magnetoresistance effect in doped manganite grain-boundary junctions

Article

关键词: MAGNETIC TUNNEL-JUNCTIONS;    LOW-FIELD MAGNETORESISTANCE;    COLOSSAL MAGNETORESISTANCE;    FERROMAGNETIC-FILMS;   

DOI  :  10.1103/PhysRevB.62.R9248

来源: SCIE

【 摘 要 】

We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La2/3Ca1/3MnO3 films deposited on SrTiO3 bicrystals. For magnetic fields H applied parallel to the gain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The observed behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.

【 授权许可】

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