Magnetoresistance at artificial interfaces in the itinerant SrRnO3 ferromagnet

Article

关键词: LOW-FIELD MAGNETORESISTANCE;    TRANSPORT-PROPERTIES;    GRAIN-BOUNDARIES;    LA0.7SR0.3MNO3;    SRRUO3;    FILMS;   

DOI  :  10.1103/PhysRevB.60.9579

来源: SCIE

【 摘 要 】

The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of Spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.

【 授权许可】

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