Quantum size effect transition in percolating nanocomposite films

Article

关键词: GRANULAR PDXC1-X FILMS;    METALS;    MAGNETORESISTANCE;    CONDUCTIVITY;    NOISE;    RESISTIVITY;    THRESHOLD;    SYSTEMS;    LOCALIZATION;    SILICON;   

DOI  :  10.1103/PhysRevB.62.17144

来源: SCIE

【 摘 要 】

We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the infinite cluster (IC). At low temperature, mesoscopic effects revealed on the conductivity, Hall-effect experiments, and low-frequency electrical noise (random telegraph noise and 1/f noise) strongly support the existence of a temperature-induced quantum size effect (QSE) transition in the metallic conduction path. Below a critical temperature related to the geometrical constriction sizes of the IC, the electronic conductivity is mainly governed by active tunnel conductance across barriers in the metallic network. The high 1/f noise level and the random telegraph noise are consistently explained by random potential modulation of the barriers transmittance due to local Coulomb charges. Our results provide evidence that a lowering of the temperature is somehow equivalent to a decrease of the metal fraction in the vicinity of the percolation limit.

【 授权许可】

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