Quantum memory effects in disordered systems and their relation to 1/f noise

Article

关键词: UNIVERSAL CONDUCTANCE FLUCTUATIONS;    ELECTRON GLASS;    GRANULAR ALUMINUM;    FIELD;    CONDUCTIVITY;    RELAXATION;    METALS;    FILMS;    MAGNETORESISTANCE;    LOCALIZATION;   

DOI  :  10.1103/PhysRevB.90.184203

来源: SCIE

【 摘 要 】

We propose that memory effects in the conductivity of metallic systems can be produced by the same two-level systems that are responsible for the 1/f noise. Memory effects are extremely long-lived responses of the conductivity to changes in external parameters such as density or magnetic field. Using quantum transport theory, we derive a universal relationship between the memory effect and the 1/f noise. Finally, we propose a magnetic memory effect, where the magnetoresistance is sensitive to the history of the applied magnetic field.

【 授权许可】

Free