Adiabatic stabilization of excitons in an intense terahertz laser

Article

关键词: SIDE-BAND GENERATION;    HIGH-FREQUENCY;    MULTIPHOTON IONIZATION;    OPTICAL-ABSORPTION;    FANO RESONANCES;    ATOMIC-HYDROGEN;    QUANTUM-WELLS;    SUPERINTENSE;    FIELDS;    DYNAMICS;   

DOI  :  10.1103/PhysRevB.66.033106

来源: SCIE

【 摘 要 】

Calculation of near-infrared absorption and transient spectra in bulk semiconductors irradiated by an intense terahertz (THz) laser predicts that, the ionization rate of the ground-state exciton, probed through the dynamic Fano resonance effect may decrease with the increase of the THz laser intensity. This counterintuitive effect indicates the excitons are stabilized against the field ionization. The much lower Rydberg energy and atomic unit of laser intensity for excitons and, in particular, the possibility of creating excitons from the vacuum state in semiconductors allow observing the excitonic stabilization experimentally, in contrast to the case of atomic stabilization.

【 授权许可】

Free