Systematic investigation of terahertz-induced excitonic Rabi splitting

Article

关键词: FOURIER-TRANSFORM SPECTROSCOPY;    SEMICONDUCTOR QUANTUM-WELLS;    SIDE-BAND GENERATION;    OPTICAL-ABSORPTION;    ELECTRIC-FIELD;    SIGNATURES;    DRIVEN;    DEPENDENCE;   

DOI  :  10.1103/PhysRevB.89.115311

来源: SCIE

【 摘 要 】

Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn) As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intra-excitonic heavy-hole 1s-2p transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.

【 授权许可】

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