Photoreflectance study of the fundamental optical properties of (Ga,Mn) As epitaxial films

Article

关键词: MOLECULAR-BEAM EPITAXY;    GAAS;    TEMPERATURE;    SEMICONDUCTORS;    SPECTROSCOPY;    GA1-XMNXAS;    BAND;    ELECTROREFLECTANCE;    FERROMAGNETISM;    SCATTERING;   

DOI  :  10.1103/PhysRevB.83.245201

来源: SCIE

【 摘 要 】

Fundamental optical properties of thin films of the (Ga,Mn) As diluted ferromagnetic semiconductor with low (1%-2%) and high (4%-6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device magnetometry, Raman spectroscopy, and high-resolution x-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E-0 electronic transition in (Ga,Mn) As, revealed significant differences between the energy band structures in the vicinity of the Gamma point of the Brillouin zone in the investigated (Ga,Mn) As films. In view of the experimental results obtained, the evolution of the valence band structure in (Ga,Mn) As with increasing Mn content is discussed, pointing to a merging of the Mn-related impurity band with the host GaAs valence band for high Mn content.

【 授权许可】

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