Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots

Article

关键词: ELECTRON-SPIN;    COMPUTATION;    TRANSPORT;    BLOCKADE;   

DOI  :  10.1103/PhysRevB.83.235314

来源: SCIE

【 摘 要 】

We apply the recently introduced Hubbard model approach to quantitatively describe the experimental charge stability diagram and tunnel coupling of silicon double quantum dot systems. The results calculated from both the generalized Hubbard model and the microscopic theory are compared with existing experimental data, and excellent agreement between theory and experiment is found. The central approximation of our theory is a reduction of the full multielectron multiband system to an effective two-electron model, which is numerically tractable. In the microscopic theory we utilize the Hund-Mulliken approximation to the electron wave functions and compare the results calculated with two different forms of confinement potentials (biquadratic and Gaussian). We discuss the implications of our work for future studies.

【 授权许可】

Free