Two-electron dephasing in single Si and GaAs quantum dots

Article

关键词: ELECTRON-SPIN;    HOLE SPIN;    SILICON;    SEMICONDUCTOR;    OSCILLATIONS;    COMPUTATION;    SCATTERING;    GE;   

DOI  :  10.1103/PhysRevB.86.035302

来源: SCIE

【 摘 要 】

We study the dephasing of two-electron states in a single quantum dot in both GaAs and Si. We investigate dephasing induced by electron-phonon coupling and by charge noise analytically for pure orbital excitations in GaAs and Si, as well as for pure valley excitations in Si. In GaAs, polar optical phonons give rise to the most important contribution, leading to a typical dephasing rate of similar to 5.9 GHz. For Si, intervalley optical phonons lead to a typical dephasing rate of similar to 140 kHz for orbital excitations and similar to 1.1 MHz for valley excitations. For harmonic, disorder-free quantum dots, charge noise is highly suppressed for both orbital and valley excitations, since neither has an appreciable dipole moment to couple to electric field variations from charge fluctuators. However, both anharmonicity and disorder break the symmetry of the system, which can lead to increased dipole moments and therefore faster dephasing rates.

【 授权许可】

Free