Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As

Article

关键词: MOLECULAR-BEAM EPITAXY;    TEMPERATURE-GROWN GAAS;    MANGANESE ACCEPTOR;    GALLIUM-ARSENIDE;    LATTICE-CONSTANT;    SEMICONDUCTORS;    DIFFRACTION;    MNAS;   

DOI  :  10.1103/PhysRevB.74.155203

来源: SCIE

【 摘 要 】

We study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1%-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from T-C proportional to p(0.33) is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.

【 授权许可】

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