Si-compatible candidates for high-kappa dielectrics with the Pbnm perovskite structure

Article

关键词: TEMPERATURE PHASE-TRANSITIONS;    SINGLE-CRYSTAL GROWTH;    SCANDATE;    TRANSISTORS;    LANTHANIDE;    PHONONS;    SILICON;    OXIDES;    LAYERS;    FILMS;   

DOI  :  10.1103/PhysRevB.82.064101

来源: SCIE

【 摘 要 】

We analyze both experimentally (where possible) and theoretically from first principles the dielectric tensor components and crystal structure of five classes of Pbnm perovskites. All of these materials are believed to be stable on silicon and are therefore promising candidates for high-kappa dielectrics. We also analyze the structure of these materials with various simple models, decompose the lattice contribution to the dielectric tensor into force constant matrix eigenmode contributions, explore a peculiar correlation between structural and dielectric anisotropies in these compounds and give phonon frequencies and infrared activities of those modes that are infrared active. We find that CaZrO3, SrZrO3, LaHoO3, and LaYO3 are among the most promising candidates for high-kappa dielectrics among the compounds we considered.

【 授权许可】

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