期刊论文详细信息
Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN | |
Article | |
关键词: FERROMAGNETIC SEMICONDUCTORS; TEMPERATURE FERROMAGNETISM; NANOWIRES; HYDROGEN; OXIDES; PLASMA; ZNO; | |
DOI : 10.1103/PhysRevB.85.075207 | |
来源: SCIE |
【 摘 要 】
Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga(1-)xCu(x)N, with x as high as 0.04. Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu-Ga exhibits a moment of 1 mu(B)/Cu, it can be suppressed by neighboring intrinsic defects such as N split interstitials.
【 授权许可】
Free