Role of nitrogen split interstitial defects in the magnetic properties of Cu-doped GaN

Article

关键词: FERROMAGNETIC SEMICONDUCTORS;    TEMPERATURE FERROMAGNETISM;    NANOWIRES;    HYDROGEN;    OXIDES;    PLASMA;    ZNO;   

DOI  :  10.1103/PhysRevB.85.075207

来源: SCIE

【 摘 要 】

Cu-doped GaN thin films are grown by plasma-assisted molecular beam epitaxy. With nitrogen plasma only, films phase segregate into GaN and Cu-rich alloys. In contrast, when nitrogen-hydrogen plasma is used, the films are single-phased Ga(1-)xCu(x)N, with x as high as 0.04. Contrary to earlier studies, however, these films are not ferromagnetic, but rather paramagnetic in nature. First-principles calculations indicate that although each substitutional Cu-Ga exhibits a moment of 1 mu(B)/Cu, it can be suppressed by neighboring intrinsic defects such as N split interstitials.

【 授权许可】

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