Structural and paramagnetic properties of dilute Ga1-xMnxN | |
Article | |
关键词: ABSORPTION FINE-STRUCTURE; VAPOR-PHASE EPITAXY; TEMPERATURE FERROMAGNETISM; ROOM-TEMPERATURE; LOCAL-STRUCTURE; SPECTROSCOPIC ELLIPSOMETRY; WURTZITE (GA,MN)N; SEMICONDUCTORS; MN; GAN; | |
DOI : 10.1103/PhysRevB.81.235210 | |
来源: SCIE |
【 摘 要 】
Systematic investigations of the structural and magnetic properties of single crystal Ga1-xMnxN films grown by metal organic vapor phase epitaxy are presented. High-resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of noninteracting Mn3+ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation-doped p-type Ga1-xMnxN/(Ga, Al)N: Mg heterostructures do not reproduce the high-temperature robust ferromagnetism reported recently for this system.
【 授权许可】
Free