Bistability signatures in nonequilibrium charge transport through molecular quantum dots

Article

关键词: NEGATIVE DIFFERENTIAL RESISTANCE;    SINGLE-MOLECULE;    CONDUCTANCE;    JUNCTIONS;    TRANSISTORS;   

DOI  :  10.1103/PhysRevB.86.081412

来源: SCIE

【 摘 要 】

We investigate the transient nonequilibrium dynamics of a molecular junction biased by a finite voltage and strongly coupled to internal vibrational degrees of freedom. Using two different, numerically exact techniques, diagrammatic Monte Carlo and the multilayer multiconfiguration time-dependent Hartree method, we show that the steady-state current through the junction may depend sensitively on the initial preparation of the system, thus revealing signatures of bistability. The influence of the bias voltage and the transient dynamics on the phenomenon of bistability is analyzed. Furthermore, a possible relation to the phenomenon of stochastic switching in nanoelectromecanical devices is discussed.

【 授权许可】

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