Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields | |
Article | |
关键词: 2-DIMENSIONAL ELECTRON LIQUID; CHARGE-DENSITY-WAVE; STATE; MAGNETORESISTANCE; PHASE; | |
DOI : 10.1103/PhysRevB.91.201301 | |
来源: SCIE |
【 摘 要 】
We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3 x 10(4). The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.
【 授权许可】
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