Identification of point defects using high-resolution electron energy loss spectroscopy

Article

关键词: VIBRATIONAL SPECTROSCOPY;    AB-INITIO;    SCATTERING;    GROWTH;    EELS;    DISLOCATIONS;    LUMINESCENCE;    NANOPARTICLE;    MICROSCOPY;    DAMAGE;   

DOI  :  10.1103/PhysRevB.99.115312

来源: SCIE

【 摘 要 】

Although there are many techniques that can detect bandgap states associated with point defects in the lattice, it is not routinely possible to determine the type of defect at submicron spatial resolution. Here we show that high-resolution electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope can locate and identify point defects with a resolution of about 10 nm in a wide-bandgap BAIN semiconductor. B interstitials, N vacancies, as well as other point defects have been experimentally detected using EELS and have been identified using density functional theory.

【 授权许可】

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