Importance of second-order deformation potentials in modeling of InAs/GaAs nanostructures

Article

关键词: QUANTUM DOTS;    ELECTRONIC-STRUCTURE;    VALENCE BANDS;    SEMICONDUCTORS;    SIMULATIONS;    SILICON;    RELAXATION;    RESONANCES;    PARAMETERS;    NANOWIRES;   

DOI  :  10.1103/PhysRevB.100.155409

来源: SCIE

【 摘 要 】

Accurate modeling of electronic properties of nanostructures is a challenging theoretical problem. Methods making use of continuous media approximation, such as k . p, sometimes struggle to reproduce results obtained with more accurate atomistic approaches. On the contrary, atomistic schemes generally come with a substantially larger cost of computation. Here, we bridge these two approaches by taking the eight-band k . p method augmented with nonlinear strain terms fit to reproduce sp(3)d(5)s* tight-binding results. We illustrate this method in the example of electron and hole states confined in quantum wells and quantum dots of photonics applications relevant InAs/GaAs material system, and demonstrate a good agreement of a nonlinear k . p scheme with the empirical tight-binding method. We discuss limits of our procedure as well as provide nonlinear eight-band k . p parameter sets for InAs and GaAs. Finally, we propose a parametrization for effective term used to improve the accuracy of the standard effective-mass method.

【 授权许可】

Free