| Magnitude and crystalline anisotropy of hole magnetization in (Ga,Mn)As | |
| Article | |
| 关键词: VALENCE BANDS; SEMICONDUCTORS; CONDUCTION; MODEL; INSB; GAAS; | |
| DOI : 10.1103/PhysRevB.74.245215 | |
| 来源: SCIE | |
【 摘 要 】
Theory of hole magnetization M-c in zinc-blende diluted ferromagnetic semiconductors is developed relaxing the spherical approximation of earlier approaches. The theory is employed to determine M-c for (Ga,Mn)As over a wide range of hole concentrations and a number of crystallographic orientations of Mn magnetization. It is found that anisotropy of M-c is practically negligible but the obtained magnitude of M-c is significantly greater than that determined in the spherical approximation. Its sign and value compares favorably with the results of available magnetization measurements and ferromagnetic resonance studies.
【 授权许可】
Free