Hole spin-flip transitions in a self-assembled quantum dot

Article

关键词: CONDUCTION-BAND;    ZINCBLENDE SEMICONDUCTORS;    VALENCE BANDS;    RELAXATION;    DEFORMATION;    RESONANCES;    ELECTRONS;    GERMANIUM;    GAAS;    INSB;   

DOI  :  10.1103/PhysRevB.102.205301

来源: SCIE

【 摘 要 】

In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the eight-band k . p model, and we calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture and direct spin-phonon mechanisms giving rise to the transition rates. We show that the biaxial and shear strain constitute dominant spin-admixture coupling mechanisms. Then, we demonstrate that hole spin lifetime can be increased if a quantum dot is covered by a strain-reducing layer. Finally, we show that the spin relaxation can be described by an effective model.

【 授权许可】

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