Quantum corrections to the conductivity in two-dimensional systems: Agreement between theory and experiment

Article

关键词: METAL-INSULATOR-TRANSITION;    WEAK-LOCALIZATION;    MAGNETOCONDUCTANCE;    MAGNETORESISTANCE;    ELECTRONS;    FIELD;    LIMIT;   

DOI  :  10.1103/PhysRevB.64.235327

来源: SCIE

【 摘 要 】

Quantum corrections to the conductivity have been studied in the two types of low-mobility two-dimensional heterostructures: those with doped quantum well, and doped barriers. The consistent analysis shows that tor the structures where electrons occupy the states only in the quantum well, all the temperature and magnetic field dependences of the components of resistivity tensor are well described by the theories of the quantum corrections. Contribution of the electron-electron interaction to the conductivity has been reliably determined for the structures with different electron density. A possible reason of large scatter in experimental data relating to the contribution of electron-electron interaction, obtained in previous papers. is analyzed. The role of the carriers occupying the states of the doped layers is discussed.

【 授权许可】

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