Vacancy-induced bound states in topological insulators

Article

关键词: HGTE QUANTUM-WELLS;    SINGLE DIRAC CONE;    SUPERCONDUCTORS;    SURFACE;    BI2SE3;   

DOI  :  10.1103/PhysRevB.84.035307

来源: SCIE

【 摘 要 】

We present an exact solution of a modified Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies can induce bound states in the band gap of topological insulators. They arise due to the Z(2) classification of time-reversal invariant insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary.

【 授权许可】

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