Electronic inhomogeneity and band structure in superstructural CuO2 planes of infinite-layer Sr0.94La0.06CuO2+y films

Article

关键词: CHARGE-TRANSFER GAP;    SPECTRAL-WEIGHT;    SURFACE-STRUCTURE;    MOTT INSULATOR;    SUPERCONDUCTIVITY;    TRANSITION;    EVOLUTION;   

DOI  :  10.1103/PhysRevB.102.100508

来源: SCIE

【 摘 要 】

Scanning tunneling microscopy and spectroscopy are utilized to study the atomic-scale structure and electronic properties of infinite-layer Sr0.94La0.06CuO2+y films prepared on SrRuO3-buffered SrTiO3(001) substrate by ozone-assisted molecular beam epitaxy. Incommensurate structural supermodulation with a period of 24.5 angstrom is identified on the CuO2-terminated surface, leading to characteristic stripes running along the 45 degrees direction with respect to the Cu-O-Cu bonds. Spatially resolved tunneling spectra reveal substantial inhomogeneity on a nanometer-length scale and emergence of in-gap states at sufficient doping. Despite the Fermi level shifting up to 0.7 eV, the charge-transfer energy gap of the CuO2 planes remains fundamentally unchanged at different doping levels. The occurrence of the CuO2 superstructure is constrained in the surface region and its formation is found to link with oxygen intake that serves as the doping agent of holes in the epitaxial films.

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