Strain-induced distortion of the bulk bands of gadolinium

Article

关键词: ANGLE-RESOLVED PHOTOEMISSION;    SURFACE ELECTRONIC-STRUCTURE;    GD(0001);    TEMPERATURE;    GD;    OVERLAYERS;    PRESSURE;    METAL;    STATE;   

DOI  :  10.1103/PhysRevB.54.16460

来源: SCIE

【 摘 要 】

Thin films of gadolinium, approximately 8 ML thick, have bren grown on thr corrugated (112) surface of molybdenum and tile electronic structure has been investigated with angle-resolved photoelectron spectroscopy. The unfavorable lattice match between the ''steplike'' Mo(112) substrate and the preferred hexagonally ordered Gd film results in an incommensurate Gd structure that appears lo be ordered, bur strained along the direction of the corrugations. The hexagonal Gd lattice is expanded by more than 20% along the ''step'' lines of rh substrate, as determined from the reduced Brillouin-zone size along the <(Gamma Sigma M)over bar> high-symmetry line and low-energy electron diffraction. The induced strain substantially alters the conventional Gd 5d/6s bulk bands to exhibit a dispersion opposite tit thar of the relaxed Gd(0001) structure. Dislocations destroy the long-range crystallographic order in the direction orthogonal to the corrugation, which results in the localization of the bands along the <(Gamma TK)over bar> symmetry line.

【 授权许可】

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