期刊论文详细信息
In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system | |
Article | |
关键词: METAL-INSULATOR-TRANSITION; DEGREE-OF-FREEDOM; 2 DIMENSIONS; COLLOQUIUM; TRANSPORT; BEHAVIOR; PHASE; | |
DOI : 10.1103/PhysRevB.86.045310 | |
来源: SCIE |
【 摘 要 】
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time tau(CR) shows a negative in-plane magnetic-field dependence, which is similar to that of the transport scattering time tau(t) obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
【 授权许可】
Free