In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

Article

关键词: METAL-INSULATOR-TRANSITION;    DEGREE-OF-FREEDOM;    2 DIMENSIONS;    COLLOQUIUM;    TRANSPORT;    BEHAVIOR;    PHASE;   

DOI  :  10.1103/PhysRevB.86.045310

来源: SCIE

【 摘 要 】

Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time tau(CR) shows a negative in-plane magnetic-field dependence, which is similar to that of the transport scattering time tau(t) obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.

【 授权许可】

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