Scattering mechanisms of highest-mobility InAs/AlxGa(1-x)Sb quantum wells

Article

关键词: 2-DIMENSIONAL ELECTRON-GAS;    INTERFACE ROUGHNESS SCATTERING;    HETEROSTRUCTURES;    TRANSPORT;    SEMICONDUCTORS;    SPINTRONICS;    RELAXATION;    GAAS;    TIME;   

DOI  :  10.1103/PhysRevB.95.115304

来源: SCIE

【 摘 要 】

We study molecular beam epitaxially grown undoped Al chi Ga1-xSb/InAs/AlSb quantum wells with different buffer and barrier designs and varying quantum well width. The highest mobilities were achieved with Al0.33Ga0.67Sb buffers and lower barriers and a quantum well width of 24 nm. These quasi-single- interface InAs/AlSb quantum well devices reached a gate-tuned mobility of 2.4 x 10(6) cm(2)/V s at a density of 1 x 10(12) cm(-2) and 1.3 K. In Hall bar devices boundary scattering is found to strongly influence the mobility determination in this mobility regime. Ionized background impurity scattering at low electron densities, device boundary scattering at intermediate electron densities, and intersubband scattering at high electron densities were identified as the most likely dominant scattering processes. Ringlike structures in the Landau fan can be explained using a single- particle model of crossing Landau levels.

【 授权许可】

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