Electronic correlations in short-period (CrAs)(n)/(GaAs)(n) ferromagnetic heterostructures

Article

关键词: HALF-METALLIC FERROMAGNETS;    MEAN-FIELD THEORY;    MOLECULAR-BEAM EPITAXY;    SUPERLATTICES;    DESIGN;    CRAS;   

DOI  :  10.1103/PhysRevB.83.035307

来源: SCIE

【 摘 要 】

We investigate half-metallicity in [001] stacked (CrAs)(n)/(GaAs)(n) heterostructures with n <= 3 by means of a combined many-body and electronic structure calculation. Interface states in the presence of strong electronic correlations are discussed for the case n = 1. For n = 2,3 our results indicate that the minority spin half-metallic gap is suppressed by local correlations at finite temperatures and continuously shrinks on increasing the heterostructure period. Although around room temperature the magnetization of the heterostructure deviates by only 2% from the ideal integer value, finite temperature polarization at E-F is reduced by at least 25%. Below the Fermi level the minority spin highest valence states are found to localize more on the GaAs layers while lowest conduction states have a many-body origin. Our results, therefore, suggest that in these heterostructures holes and electrons remain separated among different layers.

【 授权许可】

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