Simple mechanism that breaks the Hall-effect linearity at low temperatures

Article

关键词: FIELD-DEPENDENCE;    LOW-MOBILITY;    MAGNETORESISTANCE;    APPARATUS;    GRAPHENE;   

DOI  :  10.1103/PhysRevB.102.155426

来源: SCIE

【 摘 要 】

Hall resistance R-xy is commonly suggested to be linear-in-magnetic-field B, provided the field is small. We argue here that at low temperatures this linearity is broken due to weak localization/antilocalization phenomena in inhomogeneous systems, while in a uniform medium the linear-in-field dependence of R-xy (B) is preserved. We calculate the Hall resistance for different two-component media using a mean-field approach and show that this nonlinearity is experimentally observable.

【 授权许可】

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