Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic Co2MnSi electrodes

Article

关键词: ROOM-TEMPERATURE;    HEUSLER ALLOYS;    MAGNETORESISTANCE;    SPINTRONICS;    FILMS;    SPECTROSCOPY;   

DOI  :  10.1103/PhysRevB.94.094428

来源: SCIE

【 摘 要 】

In order to elucidate the origin of the temperature (T) dependence of spin-dependent tunneling conductance (G) of magnetic tunnel junctions (MTJs), we experimentally investigated the T dependence of G for the parallel and antiparallel magnetization alignments, G(P) and G(AP), of high-quality Co2MnSi (CMS)/MgO/CMS MTJs having systematically varied spin polarizations (P) at 4.2 K by varying the Mn composition alpha in Co2Mn alpha Si electrodes that exhibited giant tunneling magnetoresistance ratios. Results showed that G(P) normalized by its value at 4.2 K exhibited a notable, nonmonotonic T dependence although its variation with T was significantly smaller than that of G(AP) normalized by its value at 4.2 K, indicating that an analysis of the experimental G(P)(T) is critical to revealing the origin of the T dependence of G. By analyzing the experimental G(P)(T), we clarified that both spin-flip inelastic tunneling via a thermally excited magnon and spin-conserving elastic tunneling in which P decays with increasing T play key roles. The experimental G(AP)(T), including its stronger T dependence for higher P at 4.2 K, was also consistently explained with this model. Our findings provide a unified picture for understanding the origin of the T dependence of G of MTJs with a wide range of P, including MTJs with high P close to a half-metallic value.

【 授权许可】

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