期刊论文详细信息
Three-dimensional interface roughness in layered semiconductor structures and its effect on intersubband transitions
Article
关键词: QUANTUM-WELLS;    MU-M;    WAVELENGTH;    TRANSPORT;    SHARP;   
DOI  :  10.1103/PhysRevB.94.165307
来源: SCIE
【 摘 要 】

A general model for treating the effects of three-dimensional (3D) interface roughness (IFR) in layered semiconductor structures has been developed and experimentally verified. The configurational average of the IFR potential produces an effective grading potential in the out-of-plane direction, which significantly alters the energy spectrum of the structure. The scattering self-energy of the 3D IFR is also derived. Under strong IFR, this scattering effect is shown to be dominant over phonon interaction and impurity scattering. When applied to intersubband transitions, these theoretical predictions explain the experimentally observed anomalous energy shift and unusual broadening in the intersubband transitions in III-nitride superlattices.

【 授权许可】

Free   

  文献评价指标  
  下载次数:0次 浏览次数:0次