Low-temperature electron mobilities due to ionized-impurity scattering in multisubband two-dimensional semiconductor systems

Article

关键词: QUANTUM-WELLS;    TRANSPORT;    LAYERS;    GAAS;   

DOI  :  10.1103/PhysRevB.70.193312

来源: SCIE

【 摘 要 】

We present a theoretical and experimental study on the low-temperature electron mobilities due to ionized impurity scattering in a multisubband quasi-two-dimensional semiconductor system. The scattering rate is obtained from the solution the Lippmann-Schwinger equation in momentum space and the screening is considered within the random-phase approximation. A quantitative agreement is reached between the theoretical and experimental results for both the quantum and transport mobilities.

【 授权许可】

Free