GaN thermal transport limited by the interplay of dislocations and size effects

Article

关键词: THREADING DISLOCATIONS;    TEMPERATURE-DEPENDENCE;    GAN/SAPPHIRE 0001;    CONDUCTIVITY;    SCATTERING;    FILMS;    CRYSTALS;    GROWTH;    IMPURITIES;    SAPPHIRE;   

DOI  :  10.1103/PhysRevB.102.014313

来源: SCIE

【 摘 要 】

Measurements and first-principles calculations probe the temperature-dependent thermal conductivity (k) of GaN films with large densities of highly oriented dislocations. We demonstrate that phonon-dislocation scattering is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k is observed in samples with large dislocation densities and at lower temperatures where k anisotropy is also observed. Combination of experiment and theory give insights into the interplay of thermal resistance mechanisms limiting GaN functionalities and suggest pathways for tuning k via defect engineering.

【 授权许可】

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