Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+? thin films

Article

关键词: TEMPERATURE-DEPENDENCE;    MAGNETIC-PROPERTIES;    SINGLE-LAYER;    MAGNETORESISTANCE;    LOCALIZATION;    RESISTIVITY;    EVOLUTION;    PHASE;   

DOI  :  10.1103/PhysRevB.106.224503

来源: SCIE

【 摘 要 】

The transport properties, resistance, Hall effect, and low T magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6+delta (Bi2201) thin films are reported. From 20 to 300 K, the temperature dependence of the resistance is well described by a law of the form a + bT4/3, theoretically predicted to occur in the presence of ferromagnetic fluctuations. In addition, this prediction is reinforced by the analysis of the transverse and the longitudinal low T magnetoresistance. Interestingly, the presence of a weak disorder causing low T electronic localization allows us to evidence very short dephasing lengths, as observed in other systems with ferromagnetic fluctuations.

【 授权许可】

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