Modulation origin of 1/f noise in two-dimensional hopping

Article

关键词: LOW-FREQUENCY NOISE;    1-F NOISE;    CONDUCTION;    FLUCTUATIONS;    TRANSISTOR;    CHANNEL;   

DOI  :  10.1103/PhysRevB.64.201318

来源: SCIE

【 摘 要 】

We show that 1/f noise in a two-dimensional electron gas with hopping conduction can be explained by the modulation of conducting paths by fluctuating occupancy of nonconducting states. The noise is sensitive to the structure of the critical hopping network, which is varied by changing electron concentration, sample size and temperature. With increasing temperature, it clearly reveals the crossover between different hopping regimes.

【 授权许可】

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