Quantum thermal Hall effect in graphene

Article

关键词: BERRYS PHASE;    CONDUCTIVITY;    THERMOPOWER;    COLLOQUIUM;    TRANSPORT;    FIELD;   

DOI  :  10.1103/PhysRevB.84.075416

来源: SCIE

【 摘 要 】

The quantum thermal Hall effect in a six-terminal graphene device subjected to a thermal gradient and a perpendicular magnetic field is theoretically studied. We find that, when the Dirac-point energy is far away from the Fermi energy, the Hall thermal resistance has well-quantized plateaus and the longitudinal thermal resistance is zero at low temperature. On the other hand, when the Dirac-point energy is near the Fermi energy, a fine structure with a negative Hall-Lorentz number is exhibited in which the Wiedemann-Franz law is violated. This fine structure has a good scaling behavior and the analytical scaling functions are also obtained.

【 授权许可】

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