Hybrid functional study of band structures of GaAs1-xNx and GaSb1-xNx alloys

Article

关键词: SEMICONDUCTORS;    NITROGEN;    LUMINESCENCE;    PARAMETERS;    IMPURITIES;    EFFICIENCY;   

DOI  :  10.1103/PhysRevB.85.085134

来源: SCIE

【 摘 要 】

Band structures of GaAs1-xNx and GaSb1-xNx alloys are studied in the framework of the density functional theory within the hybrid functional scheme (HSE06). We find that the scheme gives a clear improvement over the traditional (semi) local functionals in describing, in a qualitative agreement with experiments, the bowing of electron energy band gap in GaAs1-xNx alloys. In the case of GaSb1-xNx alloys, the hybrid functional used makes the study of band structures possible ab initio without any empirical parameter fitting. We explain the trends in the band gap reductions in the two materials that result mainly from the positions of the nitrogen-induced states with respect to the bottoms of the bulk conduction bands.

【 授权许可】

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