Strain-induced programmable half-metal and spin-gapless semiconductor in an edge-doped boron nitride nanoribbon

Article

关键词: FRACTURE-TOUGHNESS;    MONOLAYER GRAPHENE;    SPINTRONICS;    GROWTH;    FIELD;   

DOI  :  10.1103/PhysRevB.93.115401

来源: SCIE

【 摘 要 】

The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks active control of the resulting electronic properties. Here we reveal that a boron nitride nanoribbon with a carbon-doped edge can be made a half-metal or a spin-gapless semiconductor in a programmable fashion. The mechanical strain serves as the on/off switches for functions of half-metal and spin-gapless semiconductor to occur. Our findings shed light on how the edge doping combined with strain engineering can affect electronic properties of two-dimensional materials.

【 授权许可】

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