Lack of quantum confinement in Ga2O3 nanolayers

Article

关键词: CRYSTAL;    FUNCTIONALS;    ABSORPTION;    SURFACES;   

DOI  :  10.1103/PhysRevB.96.081409

来源: SCIE

【 摘 要 】

beta-Ga(2)Ox(3) is a wide-band-gap semiconductor with promising applications in transparent electronics and in power devices. beta-Ga2O3 has monoclinic crystal symmetry and does not display a layered structured characteristic of 2D materials in the bulk; nevertheless, monolayer-thin Ga2O3 layers can be created. We used first-principles techniques to investigate the structural and electronic properties of these nanolayers. Surprisingly, freestanding films do not exhibit any signs of quantum confinement and exhibit the same electronic structure as bulk material. A detailed examination reveals that this can be attributed to the presence of states that are strongly confined near the surface. When the Ga2O3 layers are embedded in a wider band-gap material such as Al2O3, the expected effects of quantum confinement can be observed. The effective mass of electrons in all the nanolayers is small, indicating promising device applications.

【 授权许可】

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