期刊论文详细信息
Double quantum dot memristor
Article
关键词: NEUROMORPHIC APPLICATIONS;    SINGLE-MOLECULE;    SYSTEMS;    DEVICES;    SILICON;    SPIN;   
DOI  :  10.1103/PhysRevB.96.075446
来源: SCIE
【 摘 要 】

Memristive systems are generalizations of memristors, which are resistors with memory. In this paper, we present a quantum description of quantum dot memristive systems. Using this model we propose and experimentally demonstrate a simple and practical scheme for realizing memristive systems with quantum dots. The approach harnesses a phenomenon that is commonly seen as a bane of nanoelectronics, i.e., switching of a trapped charge in the vicinity of the device. We show that quantum dot memristive systems have hysteresis current-voltage characteristics and quantum jump-induced stochastic behavior. While our experiment requires low temperatures, the same setup could, in principle, be realized with a suitable single-molecule transistor and operated at or near room temperature.

【 授权许可】

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