Photoluminescence of freestanding single- and few-layer MoS2

Article

关键词: MONOLAYER;    RAMAN;    SPECTRUM;    STRAIN;   

DOI  :  10.1103/PhysRevB.89.125406

来源: SCIE

【 摘 要 】

We present a photoluminescence study of freestanding and Si/SiO2 supported single-and few-layer MoS2. The single-layer exciton peak (A) is only observed in freestanding MoS2. The photoluminescence of supported single-layer MoS2 instead originates from the A-(trion) peak as the MoS2 is n-type doped from the substrate. In bilayer MoS2, the van der Waals interaction with the substrate decreases the indirect band gap energy by up to similar to 80 meV. Furthermore, the photoluminescence spectra of suspended MoS2 can be influenced by interference effects.

【 授权许可】

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