Interfacial resonant tunneling induced by folded bands and providing highly spin-polarized current in spinel-oxide barrier junctions

Article

关键词: ROOM-TEMPERATURE;    MGO;    MAGNETORESISTANCE;    CONDUCTANCE;   

DOI  :  10.1103/PhysRevB.102.144423

来源: SCIE

【 摘 要 】

In spintronics, simultaneous realization of high tunneling magnetoresistance and low resistivity in magnetic tunnel junctions (MTJs) is challenging because insulating layers with higher barrier heights generally generate highly spin-polarized currents but increase resistivity. We overcome this trade-off relationship using Brillouinzone-folded bands at the interfaces in the Fe/spinel MgGa2O4/Fe MTJ. Interfacial resonant states that enhance conductance are formed by folded bands, with Fe-O hybridization playing a key role in the resonant effect intensity at the Fermi level. The electronegativity of cation Ga in spinel oxide MgGa2O4 is found to be a crucial physical quantity to control an intensity of the interfacial-resonant effect from the comparative analysis with the MgAl2O4-based MTJ.

【 授权许可】

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