Semiconductor qubits based on fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures

Article

关键词: INTERFERENCE;    EXCITONS;    DONORS;   

DOI  :  10.1103/PhysRevB.85.085302

来源: SCIE

【 摘 要 】

It has been shown that the excitons bound to individual donors in epitaxially grown ZnMgSe/ZnSe quantum-well (QW) nanostructures provide suitable single-photon sources and optically controllable qubits for quantum information technology. Here we demonstrate ion implantation as an alternative fluorine doping method for ZnMgSe/ZnSe QWs. Photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. The magnetospectroscopy results confirm the presence of two doubly connected Lambda systems in the same way as for epitaxially grown and F-doped ZnSe QWs. If special techniques such as selective implantation through a mask and registration of single-ion impacts are applied on micro-and nanocavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.

【 授权许可】

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