Kinetic Monte Carlo simulations and cross-sectional scanning tunneling microscopy as tools to investigate the heteroepitaxial capping of self-assembled quantum dots

Article

关键词: ATOMIC-FORCE MICROSCOPY;    COMPUTATION;    GROWTH;    GAAS;    ISLANDS;    FIELDS;   

DOI  :  10.1103/PhysRevB.85.155326

来源: SCIE

【 摘 要 】

The growth of self-assembled quantum dots has been intensively studied in the last decade. Despite substantial efforts, a number of details of the growth process remain unknown. The reason is the inability of current characterization techniques to image the growth process in real time. In this work, this limitation is alleviated by the use of kinetic Monte Carlo simulations in conjunction with cross-sectional scanning tunneling microscopy. The two techniques are used to study the method of strain engineering as a procedure to control the height of quantum dots. We show that fully three-dimensional kinetic Monte Carlo simulations can be matched with the experimentally obtained morphology of buried quantum dots and that combination of the two techniques provides details of the growth process that hitherto could not be obtained.

【 授权许可】

Free