Gate-controlled magnetoresistance of a paramagnetic-insulator vertical bar platinum interface

Article

关键词: PERPENDICULAR MAGNETIC-ANISOTROPY;    ELECTRIC-FIELD CONTROL;    FERROMAGNETIC SEMICONDUCTOR;    TUNNELING MAGNETORESISTANCE;    GRANULAR FERROMAGNETS;    ROOM-TEMPERATURE;    EXCHANGE;    LIQUID;    ALLOYS;    MOMENT;   

DOI  :  10.1103/PhysRevB.98.134402

来源: SCIE

【 摘 要 】

We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator vertical bar platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

【 授权许可】

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