Estimation of the spin polarization for Heusler-compound thin films by means of nonlocal spin-valve measurements: Comparison of Co2FeSi and Fe3Si

Article

关键词: ROOM-TEMPERATURE;    TUNNELING MAGNETORESISTANCE;    ELECTRICAL DETECTION;    ALLOY;    DIFFUSION;    INJECTION;   

DOI  :  10.1103/PhysRevB.85.100404

来源: SCIE

【 摘 要 】

We study room-temperature generation and detection of pure spin currents using lateral spin-valve devices with electrodes formed from the Heusler compounds Co2FeSi (CFS) or Fe3Si (FS). The magnitude of the nonlocal spin-valve signals is strongly affected by resistivity variations observed particularly in low-temperature-grown Heusler compounds containing ordered structures. From an analysis based on a one-dimensional spin diffusion model, we find that the spin polarization monotonically increases with decreasing resistivity, which depends on the structural ordering, for both the CFS and FS electrodes, and show that CFS has a larger spin polarization than FS.

【 授权许可】

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