Reflectance anisotropy spectra from Si delta-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field

Article

关键词: MOLECULAR-BEAM EPITAXY;    DIFFERENCE SPECTROSCOPY;    SUBMONOLAYER COVERAGES;    001 GAAS;    GROWTH;    DIFFRACTION;    DEPOSITION;    ALAS;    INAS;   

DOI  :  10.1103/PhysRevB.56.15277

来源: SCIE

【 摘 要 】

Reflectance anisotropy spectroscopy (RAS) has been employed in situ to investigate the overlayer growth of GaAs onto submonolayer to one monolayer coverages of Si delta layers deposited on the GaAs(001)-c(4x4) surface. The intensity of RAS features, thought to arise from the Linear electro-optic (LEG) effect, is found to vary with both the number of atoms in the Si delta layer and the position of the delta plane from the GaAs surface. Self-consistent solutions to Poisson's equation are made to calculate the electric field in the near-surface region of the samples. The results show a direct correlation between the LEO intensity and the surface field averaged over the penetration depth of the incident radiation, in confirmation of the LEO model.

【 授权许可】

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