Strain effects on the surface optical transitions of GaAs

Article

关键词: REFLECTANCE-DIFFERENCE SPECTROSCOPY;    CRITICAL-POINT PARAMETERS;    TEMPERATURE-DEPENDENCE;    DEFORMATION POTENTIALS;    001 GAAS;    GROWTH;    EPITAXY;    FILMS;    GAP;   

DOI  :  10.1103/PhysRevB.58.9659

来源: SCIE

【 摘 要 】

The surface optical properties of GaAs on Cap-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies as thin as 1 ML of GaAs deposited on top of GaP. This small shift is consistent with a transition between dimer states and dangling bond states of the Ga-Ga dimers. [S0163-1829(98)07439-6].

【 授权许可】

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