Isolated oxygen defects in 3C- and 4H-SiC: A theoretical study

Article

关键词: SILICON-CARBIDE;    BAND EDGES;    INTERFACE;    HYDROGEN;    METASTABILITY;    OXIDATION;    STATE;   

DOI  :  10.1103/PhysRevB.66.125208

来源: SCIE

【 摘 要 】

Ab initio calculations in the local-density approximation have been carried out in SiC to determine the possible configurations of the isolated oxygen impurity. Equilibrium geometry and occupation levels were calculated. Substitutional oxygen in 3C-SiC is a relatively shallow effective mass like double donor on the carbon site (O-C) and a hyperdeep double donor on the Si site (O-Si). In 4H-SiC O-C is still a double donor but with a more localized electron state. In 3C-SiC O-C is substantially more stable under any condition than O-Si or interstitial oxygen (O-i). In 4H-SiC O-C is also the most stable one except for heavy n-type doping. We propose that O-C is at the core of the electrically active oxygen-related defect family found by deep level transient spectroscopy in 4H-SiC. The consequences of the site preference of oxygen on the SiC/SiO2 interface are discussed.

【 授权许可】

Free