Formation and rapid evolution of domain structure at phase transitions in slightly inhomogeneous ferroelectrics and ferroelastics

Article

关键词: DIELECTRIC RESPONSE;    THIN-FILMS;    LAYERS;   

DOI  :  10.1103/PhysRevB.66.184109

来源: SCIE

【 摘 要 】

We present the analytical study of stability loss and evolution of domain structure in inhomogeneous ferroelectric (ferroelastic) samples for exactly solvable models. The model assumes a short-circuited ferroelectric capacitor (free ferroelastic) with two regions with slightly different critical temperatures T-c1>T-c2, where T-c1-T-c2

【 授权许可】

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