Spin and charge transport in materials with spin-dependent conductivity

Article

关键词: ROOM-TEMPERATURE;    VALVE TRANSISTOR;    INJECTION;    MAGNETORESISTANCE;    HETEROSTRUCTURE;    SILICON;   

DOI  :  10.1103/PhysRevB.86.174415

来源: SCIE

【 摘 要 】

The spin and charge transport in materials with spin-dependent conductivity has been studied. It has been shown that there is a charge accumulation along spin diffusion in a ferromagnetic metal, which causes a shortening of the spin diffusion length. It has been shown that there is a substantial interaction between the drift and diffusion currents in semiconductors. The effects of gain/damping of a spin current by a charge current and the existence of a threshold spin current in a semiconductor have been described. Because of the substantial magnitude, these new spintronics effects might be used for new designs of efficient spintronic devices. The influence of a spin drain on spin transport has been studied.

【 授权许可】

Free